The development of accurate methods for measuring the characteristic impedance of lossy printed transmission lines plays a central role in our work. Early work focused on the measurement of the characteristic impedance of planar microwave transmission lines whose characteristics are dominated by metal loss. This work was instrumental in developing accurate on-wafer measurement methods that correct for the complex and frequency dependent characteristic impedance of planar microwave transmission lines.
Current research focuses on the characterization of transmission lines fabricated on lossy silicon substrates. The results are useful not only for the design of interconnects on silicon, but provide a basis for the development of accurate high-frequency silicon thru-reflect-line calibrations.
References on:
Complete list of NIST High Speed Microelectronics Metrology projects, papers, and measurement software.
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Principal Investigator: Dylan F. Williams
